| 摘要 |
A method for manufacturing an N-type semiconductor element for a refrigeration or heating device. The N-type semiconductor element is made of tellurium material, bismuth material and selenium material. The method comprises: firstly, smashing and grinding the tellurium material, the bismuth material and the selenium material to enable the size thereof to be 2000 meshes or more than 2000 meshes; and then, according to the proportion of each material in parts by weight, conducting proportioning on the materials to obtain a mixture, wherein the proportion thereof is 40 to 44 parts of tellurium, 53 to 57 parts of bismuth and 28 to 32 parts of selenium. When the N-type semiconductor element is in operation, the temperature difference between both ends thereof is larger, and through a test, when the N-type semiconductor element is in operation, the temperature difference between the cold end and the hot end thereof reaches about 73°C to 78°C. Therefore, the N-type semiconductor element has the advantages of high operation efficiency and lower energy consumption. The N-type semiconductor element is particularly suitable for being used to manufacture a refrigeration or heating device of a semiconductor. |
