发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To ensure withstanding voltage of a transistor to which a voltage higher than a power supply voltage is applied.SOLUTION: A voltage control circuit 20 has a voltage lower control circuit 21 and a switching circuit 22. The voltage lower control circuit 21 is connected to an external terminal P11 (node N01). The voltage lower control circuit 21 generates an internal voltage V12 based on an input from the external terminal P11, which is lower than the voltage (terminal voltage) of the input. The switching circuit 22 outputs when the internal voltage VI2 is lower than a high potential voltage VD2, a control voltage VGA at a level depending on the high potential voltage VD2. The switching circuit 22 outputs when the high potential voltage VD2 is lower than the internal voltage VI2, a control voltage VGA at a level depending on the internal voltage VI2.SELECTED DRAWING: Figure 3
申请公布号 JP2016021638(A) 申请公布日期 2016.02.04
申请号 JP20140144226 申请日期 2014.07.14
申请人 SOCIONEXT INC 发明人 OMI HAJIME;UNO OSAMU;IWAMOTO MASAHIRO;ITONAGA YUICHI
分类号 H03K19/003;H03K19/0175 主分类号 H03K19/003
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