发明名称 |
NON-BRIDGING CONTACT VIA STRUCTURES IN PROXIMITY |
摘要 |
A first photoresist layer is patterned with a first pattern that includes an opening in a region between areas of two adjacent via holes to be formed. The opening in the first photoresist is transferred into a template layer to form a line trench therein. The lateral dimension of the trench is reduced by depositing a contiguous spacer layer that does not fill the trench completely. An etch-resistant material layer is conformally deposited and fills the trench, and is subsequently recessed to form an etch-resistant material portion filling the trench. A second photoresist layer is applied and patterned with a second pattern, which includes an opening that includes areas of two via holes and an area therebetween. A composite pattern of an intersection of the second pattern and the complement of the pattern of the etch-resistant material portion is transferred through the template layer. |
申请公布号 |
US2016035650(A1) |
申请公布日期 |
2016.02.04 |
申请号 |
US201514884076 |
申请日期 |
2015.10.15 |
申请人 |
International Business Machines Corporation |
发明人 |
Tseng Chiahsun;Liu Jin;Zhuang Lei |
分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
1. A structure comprising:
a stack of a template layer and a contiguous spacer layer overlying said template layer; an etch-resistant material portion overlying a recessed portion of said stack; and a pair of via structures embedded within said stack and laterally spaced by said etch-resistant material portion and said recessed portion of said stack. |
地址 |
Armonk NY US |