METHODS OF MANUFACTURING SEMICONDUCTOR DIEVICES

摘要

According to the present invention, a method for manufacturing a semiconductor device includes forming a gate pattern on a semiconductor substrate; forming an amorphous region on a side of the gate pattern by injecting amorphizatoin ions into the semiconductor substrate; forming a recess region by removing the amorphous region; and forming a source/drain pattern which is filled in the recess region. The etch rate of the amorphous region in a first direction is the same as that of the amorphous region in a second direction. The first direction may face the [111] crystal plane of the semiconductor substrate.