| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SAME |
| 摘要 |
A semiconductor device includes, an alloy layer sandwiched between a first Ag layer formed on a mounting board or circuit board and a second Ag layer formed on a semiconductor element, wherein the alloy layer contains an intermetallic compound of Ag3Sn formed by Ag components of the first Ag layer and the second Ag layer and Sn, and wherein a plurality of wires containing Ag are arranged extended from an outside-facing periphery of the alloy layer. |
| 申请公布号 |
US2016035691(A1) |
申请公布日期 |
2016.02.04 |
| 申请号 |
US201414784127 |
申请日期 |
2014.03.27 |
| 申请人 |
MITSUBISHI ELECTRIC CORPORATION |
发明人 |
YAMAZAKI Koji;ARAKI Takeshi |
| 分类号 |
H01L23/00;B23K35/30;C22C5/06 |
主分类号 |
H01L23/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device in which a semiconductor element is bonded to a mounting board, said semiconductor device comprising:
an alloy layer sandwiched between a first Ag layer formed on the mounting board and a second Ag layer formed on the semiconductor element; wherein the alloy layer contains an intermetallic compound of Ag3Sn formed by Ag components of the first Ag layer and the second Ag layer and Sn, and a plurality of wires containing Ag are arranged as being extended from an outside-facing periphery of the alloy layer. |
| 地址 |
Tokyo JP |
