发明名称 Surface emitting semiconductor laser, surface emitting semiconductor laser array, surface emitting semiconductor laser device, optical transmission device, information processing apparatus, and method of producing surface emitting semiconductor laser
摘要 A surface emitting semiconductor laser includes a substrate, a first conductivity-type first semiconductor multilayer reflector, an active layer, a semiconductor layer, a second conductivity-type second semiconductor multilayer reflector that includes a current confinement layer, and a heat dissipating metal member. At least the first semiconductor multilayer reflector, the active layer, the semiconductor layer, and the second semiconductor multilayer reflector are stacked in this order on the substrate. A columnar structure having a top portion, a side surface, and a bottom portion is formed from the second semiconductor multilayer reflector to the semiconductor layer. The heat dissipating metal member is connected to the semiconductor layer exposed at the bottom portion of the columnar structure.
申请公布号 US9252562(B2) 申请公布日期 2016.02.02
申请号 US201414275227 申请日期 2014.05.12
申请人 FUJI XEROX CO., LTD. 发明人 Hayakawa Junichiro;Takeda Kazutaka;Murakami Akemi
分类号 H01S5/024;H04B10/50;H01S5/183;G03G15/04;H01S5/42;H01L33/64;H01L33/10;H01L33/38;H01L33/06;H01L33/04;H01S5/042 主分类号 H01S5/024
代理机构 Oliff PLC 代理人 Oliff PLC
主权项 1. A surface emitting semiconductor laser comprising: a substrate; a first conductivity-type first semiconductor multilayer reflector; an active layer; a semiconductor layer; a second conductivity-type second semiconductor multilayer reflector that includes a current confinement layer; a heat dissipating metal member, wherein at least the first semiconductor multilayer reflector, the active layer, the semiconductor layer, and the second semiconductor multilayer reflector are stacked one on top of another in this order on the substrate, wherein a columnar structure having a top portion, a side surface, and a bottom portion is formed so as to extend from the second semiconductor multilayer reflector to the semiconductor layer, and wherein the heat dissipating metal member is connected to the semiconductor layer exposed at the bottom portion of the columnar structure; and a first electrode formed at a top portion of the columnar structure; and a second electrode formed at a rear surface of the substrate.
地址 Tokyo JP