Semiconductor integrated circuit, method for fabricating the same, and semiconductor package

摘要

A semiconductor integrated circuit device includes a TSV (Through Silicon Via) extending through a substrate, a first well in the substrate adjacent a first surface of the substrate, a gate of an active device on the first well, a charging protection well, and a charging protection gate on the charging protection well. The charging protection well is disposed in the substrate adjacent the first surface of the substrate, is interposed between the TSV hole and the first well, and surrounds the TSV hole. The charging protection gate prevents the gate of the active device from being damaged when the TSV is formed especially when using a plasma etch process to form a TSV hole in the substrate.

主权项

1. A semiconductor integrated circuit device comprising:
a substrate that has a first outer surface and a second outer surface, and a TSV (through silicon via) hole extending therethrough between the first outer surface and the second outer surface; a TSV contact in the TSV hole; a first well in the substrate and having a surface contiguous with the first outer surface of the substrate; a first gate of an active device on the first well; a charging protection well in the substrate, interposed between the TSV hole and the first well as spaced in the substrate from the first well, having a surface contiguous with the first outer surface of the substrate, and surrounding the TSV hole; and a charging protection gate on the charging protection well, and wherein the charging protection gate is a dummy gate electrically isolated from the active device.