Magnetoresistive element

摘要

According to one embodiment, a magnetoresistive element comprises a storage layer having perpendicular magnetic anisotropy with respect to a film plane and having a variable direction of magnetization, a reference layer having perpendicular magnetic anisotropy with respect to the film plane and having an invariable direction of magnetization, a tunnel barrier layer formed between the storage layer and the reference layer and containing O, and an underlayer formed on a side of the storage layer opposite to the tunnel barrier layer. The reference layer comprises a first reference layer formed on the tunnel barrier layer side and a second reference layer formed opposite the tunnel barrier layer. The second reference layer has a higher standard electrode potential than the underlayer.

主权项

1. A magnetic random access memory comprising:
a first nonmagnetic layer containing at least one of Hf, Ta, Nb, Al, and Ti; a first magnetic layer provided on the first nonmagnetic layer and containing a magnetic material; a second nonmagnetic layer provided on the first magnetic layer and containing O; a second magnetic layer provided on the second nonmagnetic layer and containing the magnetic material, the magnetic material in the second magnetic layer and the magnetic material in the first magnetic layer being same in concentration; and a third magnetic layer provided on the second magnetic layer and including Pt or Pd.