Methods of forming memory cells

摘要

Some embodiments include methods of forming memory cells. A series of rails is formed to include bottom electrode contact material. Sacrificial material is patterned into a series of lines that cross the series of rails. A pattern of the series of lines is transferred into the bottom electrode contact material. At least a portion of the sacrificial material is subsequently replaced with top electrode material. Some embodiments include memory arrays that contain a second series of electrically conductive lines crossing a first series of electrically conductive lines. Memory cells are at locations where the electrically conductive lines of the second series overlap the electrically conductive lines of the first series. First and second memory cell materials are within the memory cell locations. The first memory cell material is configured as planar sheets and the second memory cell material is configured as upwardly-opening containers.

主权项

1. A method of forming a plurality of memory cells, comprising:
forming a series of rails extending along a first direction, individual rails extending along multiple memory cell locations, the individual rails comprising bottom electrode contact material over electrically conductive lines, the electrically conductive lines being a first series of lines; forming an expanse of sacrificial material extending across the rails; patterning the sacrificial material into a second series of lines extending along a second direction that crosses the first direction; transferring a pattern of the second series of lines into the bottom electrode contact material to singulate the bottom electrode contact material into segments associated with only single memory cell locations; replacing at least a portion of the sacrificial material of the second series of lines with top electrode material; and wherein a first memory cell material is formed within the memory cell locations prior to forming the expanse of sacrificial material, and wherein a second memory cell material is formed within the memory cell locations by replacing a portion of the sacrificial material of the second series of lines with the second memory cell material.