发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM
摘要 A technique includes forming a film containing a first element, a second element and carbon on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing supplying a first precursor having chemical bonds between the first elements to a substrate, supplying a second precursor having chemical bonds between the first element and carbon without having the chemical bonds between the first elements to the substrate, and supplying a first reactant containing the second element to the substrate.
申请公布号 US2016024659(A1) 申请公布日期 2016.01.28
申请号 US201514804604 申请日期 2015.07.21
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 SHIMAMOTO Satoshi;HIROSE Yoshiro;YAMAMOTO Ryuji
分类号 C23C16/52;C23C16/455;H01L21/02 主分类号 C23C16/52
代理机构 代理人
主权项 1. A method of manufacturing a semiconductor device, comprising forming a film containing a first element, a second element and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a first precursor having chemical bonds between the first elements to a substrate; supplying a second precursor having chemical bonds between the first element and carbon without having the chemical bonds between the first elements to the substrate; and supplying a first reactant containing the second element to the substrate.
地址 Tokyo JP