发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM |
摘要 |
A technique includes forming a film containing a first element, a second element and carbon on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing supplying a first precursor having chemical bonds between the first elements to a substrate, supplying a second precursor having chemical bonds between the first element and carbon without having the chemical bonds between the first elements to the substrate, and supplying a first reactant containing the second element to the substrate. |
申请公布号 |
US2016024659(A1) |
申请公布日期 |
2016.01.28 |
申请号 |
US201514804604 |
申请日期 |
2015.07.21 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
SHIMAMOTO Satoshi;HIROSE Yoshiro;YAMAMOTO Ryuji |
分类号 |
C23C16/52;C23C16/455;H01L21/02 |
主分类号 |
C23C16/52 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a semiconductor device, comprising forming a film containing a first element, a second element and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a first precursor having chemical bonds between the first elements to a substrate; supplying a second precursor having chemical bonds between the first element and carbon without having the chemical bonds between the first elements to the substrate; and supplying a first reactant containing the second element to the substrate. |
地址 |
Tokyo JP |