| 发明名称 |
SAUCER-SHAPED ISOLATION STRUCTURES FOR SEMICONDUCTOR DEVICES |
| 摘要 |
An isolation structure formed in a semiconductor substrate of a first conductivity type includes a region of a second conductivity type opposite to the first conductivity type. The region of the second conductivity type is saucer-shaped and has a floor portion substantially parallel to the top surface of the substrate and a sloped sidewall portion. The sloped sidewall portion extends downward from the top surface of the substrate at an oblique angle and merges with the floor portion. The floor portion and the sloped sidewall portion together form an isolated pocket of the substrate. |
| 申请公布号 |
US2016027869(A1) |
申请公布日期 |
2016.01.28 |
| 申请号 |
US201514875176 |
申请日期 |
2015.10.05 |
| 申请人 |
ADVANCED ANALOGIC TECHNOLOGIES (HONG KONG) LIMITED ;ADVANCED ANALOGIC TECHNOLOGIES INCORPORATED |
发明人 |
Chan Wai Tien;Disney Donald Ray;Williams Richard Kent |
| 分类号 |
H01L29/06;H01L21/762;H01L21/761 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An isolation structure formed in a semiconductor substrate of a first conductivity type, the substrate having a top surface and not including an epitaxial layer, the structure including a region of a second conductivity type opposite to the first conductivity type, the region of the second conductivity type being saucer-shaped and having a floor portion substantially parallel to the top surface of the substrate and a sloped sidewall portion, the sloped sidewall portion extending downward from the top surface of the substrate at an oblique angle and merging with the floor portion, the floor portion and the sloped sidewall portion together forming an isolated pocket of the substrate. |
| 地址 |
Hong Kong CN |
