| 发明名称 |
Semiconductor Device and Method of Manufacturing the Same |
| 摘要 |
A semiconductor device and a method of manufacturing the same are disclosed. The semiconductor device includes a substrate and a MOS transistor formed on the substrate. The MOS transistor includes a first gate insulating layer formed on the substrate, a second gate insulating layer formed on one side of the first gate insulating layer and having a thickness thicker than that of the first gate insulating layer, a gate electrode formed on the first gate insulating layer and the second gate insulating layer, a source region adjacent to the first gate insulating layer, and a drain region adjacent to the second gate insulating layer. |
| 申请公布号 |
US2016027899(A1) |
申请公布日期 |
2016.01.28 |
| 申请号 |
US201514802809 |
申请日期 |
2015.07.17 |
| 申请人 |
Dongbu Hitek Co., Ltd. |
发明人 |
KIM Dong Seok;LEE Jeong Gwan |
| 分类号 |
H01L29/66;H01L29/423;H01L21/265;H01L21/8234;H01L27/088;H01L29/78;H01L21/02 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a substrate; and a MOS transistor formed on the substrate, wherein the MOS transistor comprises:
a first gate insulating layer formed on the substrate;a second gate insulating layer formed on one side of the first gate insulating layer and having a thickness thicker than that of the first gate insulating layer;a gate electrode formed on the first gate insulating layer and the second gate insulating layer;a source region adjacent to the first gate insulating layer; anda drain region adjacent to the second gate insulating layer. |
| 地址 |
Seoul KR |
