THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR, ARRAY SUBSTRATE AND DISPLAY DEVICE

摘要

A thin-film transistor and a manufacturing method therefor, an array substrate and a display device. The thin-film transistor is of a gate bottom contact type and comprises a gate electrode (3) and a gate insulating layer (2), wherein the gate insulating layer (2) is provided with a groove (4) at a position corresponding to the gate electrode (3). The thin-film transistor avoids the problem that an active layer tends to break at the channel positions of the source and drain electrodes, thereby increasing the performance and stability of the thin-film transistor, and reducing production costs.