Method of manufacturing light-absorbing layer having semiconductor nanoparticles and method of manufacturing semiconductor device having the same light-absorbing layer

摘要

An exemplary method of manufacturing a light-absorbing layer and a method of manufacturing a semiconductor device including the same light-absorbing layer are provided. The exemplary method includes: forming a nanoparticles film by applying a semiconductor nanoparticles solution on a substrate; thermally treating the nanoparticles film at least one time to cause adhesion among the nanoparticles; and forming a light-absorbing layer by applying a light-absorbing solution on the nanoparticles film.

主权项

1. A method of manufacturing a light-absorbing layer comprising semiconductor nanoparticles, the method comprising:
forming a nanoparticles film by applying a solution of semiconductor nanoparticles on a substrate; thermally treating the nanoparticles film at least one time to cause adhesion among the nanoparticles; surface-treating the nanoparticles film in order to reduce a surface state of the nanoparticles film by (i) coating the nanoparticles film with a solution containing a ligand for surface treatment and (ii) drying the coated nanoparticles film; and forming a light-absorbing layer by applying a light-absorbing solution on the nanoparticles film, wherein each of the semiconductor nanoparticles has at least one of a tetrapod shape and a hyper-branched shape, wherein the method further comprises, before forming the nanoparticles film: dispersing the semiconductor nanoparticles in a solvent; and modifying surfaces of the semiconductor nanoparticles to an L-type ligand.