Solid-state image pickup apparatus

摘要

Provided is a back-illuminated solid-state image pickup apparatus having an improved color separation characteristic. A photo detector includes a first photo detector unit and a second photo detector unit disposed deeper than the first photo detector unit with respect to a back surface of a semiconductor substrate, wherein the first photo detector unit includes a first-conductivity-type first semiconductor region where carriers generated through photo-electric conversion are collected as signal carriers. A readout portion includes a first-conductivity-type second semiconductor region extending in a depth direction such that the carriers collected in the first semiconductor region are read out to a front surface of the semiconductor substrate. A unit that reduces the amount of light incident on the second semiconductor region is provided.

主权项

1. A back-illuminated solid-state image pickup apparatus comprising:
a semiconductor substrate including a plurality of pixels, each pixel including a photo detector and a readout portion; a wire disposed on a first main surface of the semiconductor substrate; and a microlens disposed on a second main surface of the semiconductor substrate opposite to the first main surface and configured to focus light, wherein light enters the photo detector from the second main surface of the semiconductor substrate, wherein the photo detector includes a first photo detector unit and a second photo detector unit disposed deeper than the first photo detector unit with respect to the second main surface, wherein the first photo detector unit includes a first-conductive-type first semiconductor region in which carriers generated through photo-electric conversion are collected as signal carriers, wherein the readout portion includes a first-conductive-type second semiconductor region extending in a depth direction of the semiconductor substrate such that the carriers collected at the first semiconductor region are read out to the first main surface, and wherein the microlens is disposed such that a projection of an edge of the microlens in the depth direction intersects the second semiconductor region.