发明名称 |
Positive resist composition and patterning process |
摘要 |
A positive resist composition is provided comprising a polymer comprising recurring units having a carboxyl or phenolic hydroxyl group substituted with an acid labile group and recurring units of hydroxyanthraquinone or hydroxy-2,3-dihydro-1,4-anthracenedione methacrylate, and having a Mw of 1,000-500,000. The resist composition has a satisfactory effect of suppressing acid diffusion and a high resolution, and forms a pattern of good profile and minimal edge roughness after exposure. |
申请公布号 |
US9244350(B2) |
申请公布日期 |
2016.01.26 |
申请号 |
US201414323283 |
申请日期 |
2014.07.03 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
Hatakeyama Jun;Sagehashi Masayoshi |
分类号 |
G03F7/039;G03F7/20;G03F7/38;C08F220/30;C08F220/38;C09D133/14 |
主分类号 |
G03F7/039 |
代理机构 |
Westerman, Hattori, Daniels & Adrian, LLP |
代理人 |
Westerman, Hattori, Daniels & Adrian, LLP |
主权项 |
1. A positive resist composition comprising a polymer comprising recurring units having a carboxyl and/or phenolic hydroxyl group substituted with an acid labile group and recurring units (a2) having hydroxy-2,3-dihydro-1,4-anthracenedione group, or recurring units (a1) having a hydroxyanthraquinone group and recurring units (a2) having a hydroxy-2,3-dihydro-1,4-anthracenedione group, represented by the general formula (1), and having a weight average molecular weight of 1,000 to 500,000 as a base resin, wherein R1 and R3 each are hydrogen or a straight, branched or cyclic C1-C6 alkyl, alkoxy or acyloxy group, R2 and R4 each are hydrogen or methyl, m and n each are an integer of 1 to 3, 0≦a1<1.0, 0<a2<1.0 and 0<a1+a2<1.0. |
地址 |
Tokyo JP |