| 发明名称 | Method for manufacturing semiconductor device for forming metal element-containing layer on insulating layer in which concave portion is formed, semiconductor device including insulating layer in which concave portion is formed, and semiconductor layer on insulating layer in which concave portion is formed | ||
| 摘要 | A method for manufacturing a semiconductor device for forming a metal element-containing layer on an insulating layer in which a concave portion is formed, includes: forming an oxide layer including mainly an oxide of the metal element on the insulating layer including the concave portion; and forming a silicate layer including mainly a silicate of the metal element by making the oxide layer into silicate by annealing under a reducing atmosphere. | ||
| 申请公布号 | US9245847(B2) | 申请公布日期 | 2016.01.26 |
| 申请号 | US201414510388 | 申请日期 | 2014.10.09 |
| 申请人 | TOKYO ELECTRON LIMITED | 发明人 | Matsumoto Kenji;Hamada Tatsufumi;Maekawa Kaoru |
| 分类号 | H01L23/532;H01L21/02;H01L21/3105;H01L21/768;C23C16/06;C23C16/40;C23C16/455;C23C16/46;C23C16/50;H01L21/67;C23C16/04;C23C16/56 | 主分类号 | H01L23/532 |
| 代理机构 | Nath, Goldberg & Meyer | 代理人 | Nath, Goldberg & Meyer ;Meyer Jerald L. |
| 主权项 | 1. A method for manufacturing a semiconductor device for forming a metal element-containing layer on an insulating layer in which a concave portion is formed, comprising: forming an oxide layer including an oxide of the metal element on the insulating layer including the concave portion; and forming a silicate layer including a silicate of the metal element by making the oxide layer silicate by annealing under a reducing atmosphere, wherein the reducing atmosphere contains one or more selected from a group consisting of hydrogen, carbon monoxide, ammonia and hydrazine. | ||
| 地址 | Tokyo JP | ||