| 发明名称 | Method of forming Ga2O3-based crystal film and crystal multilayer structure | ||
| 摘要 | A method of forming a Ga2O3-based crystal film includes epitaxially growing a Ga2O3-based crystal film on a (001)-oriented principal surface of a Ga2O3-based substrate at a growth temperature of not less than 750° C. A crystal multilayer structure includes a Ga2O3-based substrate with a (001)-oriented principal surface, and a Ga2O3-based crystal film formed on the principal surface of the Ga2O3-based substrate by epitaxial growth. The principal surface has a flatness of not more than 1 nm in an RMS value. | ||
| 申请公布号 | US9245749(B2) | 申请公布日期 | 2016.01.26 |
| 申请号 | US201414581893 | 申请日期 | 2014.12.23 |
| 申请人 | TAMURA CORPORATION;NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY | 发明人 | Sasaki Kohei;Higashiwaki Masataka |
| 分类号 | H01L29/06;H01L21/02;H01L29/24;C30B23/02;C30B25/18;C30B25/20;C30B29/16;H01L29/78;H01L29/778;H01L29/812;H01L29/872 | 主分类号 | H01L29/06 |
| 代理机构 | McGinn IP Law Group, PLLC | 代理人 | McGinn IP Law Group, PLLC |
| 主权项 | 1. A method of forming a Ga2O3-based crystal film, comprising epitaxially growing a Ga2O3-based crystal film on a (001)-oriented principal surface of a Ga2O3-based substrate at a growth temperature of not less than 750° C. wherein the principal surface of the Ga2O3-based crystal film has a flatness of not more than 1 nm in an RMS value. | ||
| 地址 | Tokyo JP | ||