| 发明名称 | Uniform finFET gate height | ||
| 摘要 | A structure including a first plurality of fins and a second plurality of fins etched from a semiconductor substrate, and a fill material located above the semiconductor substrate and between the first plurality of fins and the second plurality of fins, the fill material does not contact either the first plurality of fins or the second plurality of fins. | ||
| 申请公布号 | US9245965(B2) | 申请公布日期 | 2016.01.26 |
| 申请号 | US201414327598 | 申请日期 | 2014.07.10 |
| 申请人 | GLOBALFOUNDRIES Inc. | 发明人 | Haran Balasubramanian S.;Mehta Sanjay;Ponoth Shom;Ramachandran Ravikumar;Schmitz Stefan;Standaert Theodorus E. |
| 分类号 | H01L29/423;H01L27/12;H01L27/088;H01L21/28;H01L21/84;H01L21/8234;H01L29/66 | 主分类号 | H01L29/423 |
| 代理机构 | Heslin Rothenberg Farley & Mesiti P.C. | 代理人 | Heslin Rothenberg Farley & Mesiti P.C. |
| 主权项 | 1. A structure comprising: a first plurality of fins and a second plurality of fins etched from a semiconductor substrate; and a fill material located above the semiconductor substrate and only between the first plurality of fins and the second plurality of fins, the fill material does not contact either the first plurality of fins or the second plurality of fins, and a top surface of the fill material is substantially flush with a top surface of each of the first plurality of fins and the second plurality of fins, and a bottom surface of the fill material is substantially flush with a bottom surface of each of the first plurality of fins and the second plurality of fins. | ||
| 地址 | Grand Cayman KY | ||