Semiconductor device and method for manufacturing the same

摘要

An object is to improve water resistance and reliability of a semiconductor device by reducing the degree of peeling of a film. In a semiconductor device, a first inorganic insulating layer, a semiconductor element layer, a second inorganic insulating layer, an organic insulating layer, and a third inorganic insulating layer are sequentially stacked over a substrate. The second inorganic insulating layer is in contact with the first inorganic insulating layer in an opening portion provided in the semiconductor element layer. The third inorganic insulating layer is in contact with the second inorganic insulating layer in an opening portion provided in the organic insulating layer. In a region where the second inorganic insulating layer and the third inorganic insulating layer are in contact with each other, the second inorganic insulating layer has a plurality of irregularities or openings.

主权项

1. A semiconductor device comprising:
a first inorganic insulating layer, a semiconductor element layer, a second inorganic insulating layer, an organic insulating layer, and a third inorganic insulating layer that are sequentially stacked over a substrate, wherein the second inorganic insulating layer is in contact with the first inorganic insulating layer in a first opening portion provided in the semiconductor element layer, wherein the third inorganic insulating layer is in contact with the second inorganic insulating layer in a second opening portion provided in the organic insulating layer, and wherein in a region where the second inorganic insulating layer and the third inorganic insulating layer are in contact with each other, a surface of the second inorganic insulating layer has a plurality of irregularities.