发明名称 |
Transmission electron diffraction measurement apparatus and method for measuring transmission electron diffraction pattern |
摘要 |
Provided is a transmission electron diffraction measurement apparatus including an electron gun; a first optical system under the electron gun; a sample chamber under the first optical system; a second optical system under the sample chamber; an observation chamber under the second optical system; a region that emits light by receiving energy from an electron in the observation chamber; and a camera facing the region. |
申请公布号 |
US9244025(B2) |
申请公布日期 |
2016.01.26 |
申请号 |
US201414305173 |
申请日期 |
2014.06.16 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
Ohgarane Daisuke;Dairiki Koji;Takahashi Masahiro;Ito Shunichi;Takahashi Erika |
分类号 |
G01N23/205;G01N23/20;H01J37/06 |
主分类号 |
G01N23/205 |
代理机构 |
Robinson Intellectual Property Law Office |
代理人 |
Robinson Intellectual Property Law Office ;Robinson Eric J. |
主权项 |
1. A method for measuring a transmission electron diffraction pattern comprising the steps of:
irradiating an oxide semiconductor film with an electron emitted from an electron gun; and taking a moving image of a pattern appearing on a fluorescent plate by irradiating the oxide semiconductor film with the electron, wherein the oxide semiconductor film includes indium, gallium, and zinc. |
地址 |
Kanagawa-ken JP |