发明名称 Transmission electron diffraction measurement apparatus and method for measuring transmission electron diffraction pattern
摘要 Provided is a transmission electron diffraction measurement apparatus including an electron gun; a first optical system under the electron gun; a sample chamber under the first optical system; a second optical system under the sample chamber; an observation chamber under the second optical system; a region that emits light by receiving energy from an electron in the observation chamber; and a camera facing the region.
申请公布号 US9244025(B2) 申请公布日期 2016.01.26
申请号 US201414305173 申请日期 2014.06.16
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Ohgarane Daisuke;Dairiki Koji;Takahashi Masahiro;Ito Shunichi;Takahashi Erika
分类号 G01N23/205;G01N23/20;H01J37/06 主分类号 G01N23/205
代理机构 Robinson Intellectual Property Law Office 代理人 Robinson Intellectual Property Law Office ;Robinson Eric J.
主权项 1. A method for measuring a transmission electron diffraction pattern comprising the steps of: irradiating an oxide semiconductor film with an electron emitted from an electron gun; and taking a moving image of a pattern appearing on a fluorescent plate by irradiating the oxide semiconductor film with the electron, wherein the oxide semiconductor film includes indium, gallium, and zinc.
地址 Kanagawa-ken JP
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