MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE

摘要

The present invention provides a semiconductor device with high aperture ratio or a manufacturing method thereof. Also, the present invention provides a semiconductor device with low power consumption or a manufacturing method thereof. The semiconductor device comprises: a conductive layer having translucency functioning as a gate electrode; a gate insulation film which is formed on the conductive layer having the translucency; a semiconductor layer over the gate insulation film on the conductive layer functioning as the gate electrode; and a conductive layer having translucency functioning as a source electrode or a drain electrode electrically connected to the semiconductor layer.