| 发明名称 |
FABRICATION OF SHIELDED GATE TRENCH MOSFET WITH INCREASED SOURCE-METAL CONTACT |
| 摘要 |
A semiconductor device formed on a semiconductor substrate having a substrate top surface, comprising: a gate trench extending from the substrate top surface into the semiconductor substrate; a gate electrode in the gate trench; a gate top dielectric material disposed over the gate electrode; a body region adjacent to the gate trench; a source region embedded in the body region; a metal layer disposed over at least a portion of a gate trench opening and at least a portion of the source region, wherein: the source region has a curved sidewall portion that is adjacent to the gate trench, and that extends above the gate top dielectric material. |
| 申请公布号 |
US2016020291(A1) |
申请公布日期 |
2016.01.21 |
| 申请号 |
US201514871826 |
申请日期 |
2015.09.30 |
| 申请人 |
Alpha and Omega Semiconductor Incorporated |
发明人 |
Chen John |
| 分类号 |
H01L29/423;H01L29/78;H01L29/08 |
主分类号 |
H01L29/423 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device formed on a semiconductor substrate having a substrate top surface, comprising:
a gate trench extending from the substrate top surface into the semiconductor substrate; a gate electrode in the gate trench; a gate top dielectric material disposed over the gate electrode; a body region adjacent to the gate trench; a source region embedded in the body region; a metal layer disposed over at least a portion of a gate trench opening and at least a portion of the source region, wherein: the source region has a curved sidewall portion that is adjacent to the gate trench, and that extends above the gate top dielectric material. |
| 地址 |
Sunnyvale CA US |
