| 发明名称 |
LITHOGRAPHY USING INTERFACE REACTION |
| 摘要 |
A method of forming a semiconductor structure by; forming a first mask trench in a first mask, where the first mask is on a substrate; forming a second mask in the first mask trench; and forming a third mask between the first mask and the second mask by reacting the first mask with the second mask, where the first mask, the second mask, and the third mask all have different etching properties. |
| 申请公布号 |
US2016020098(A1) |
申请公布日期 |
2016.01.21 |
| 申请号 |
US201414333544 |
申请日期 |
2014.07.17 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Cheng Kangguo;Hashemi Pouya;Khakifirooz Ali;Reznicek Alexander |
| 分类号 |
H01L21/033;H01L21/02;H01L21/324;H01L21/027;H01L21/3105 |
主分类号 |
H01L21/033 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a semiconductor structure comprising:
forming a first mask trench in a first mask, wherein the first mask is on a substrate; forming a second mask in the first mask trench; and forming a third mask at a vertical interface between the first mask and the second mask using a diffusion process, wherein the third mask extends into a portion of the first mask and into a portion of the second mask. |
| 地址 |
Armonk NY US |
