DOPING CONTROL METHODS AND RELATED SYSTEMS

摘要

A system for cleaning dopant contamination in a process chamber is disclosed. The system includes a susceptor and a chamber kit component, a first plurality of lamps configured to heat the susceptor, a second plurality of lamps configured to heat the chamber kit component, and a gas supply configured to provide a chlorine cleaning gas. The system is configured to deposit a layer on a substrate at a deposition temperature and perform an in-situ clean of the process chamber, including the chamber kit component, at the deposition temperature. A method for cleaning dopant contamination includes depositing a layer over a substrate at a deposition temperature, performing an in-situ clean of the process chamber and a process kit component at the deposition temperature, unloading the substrate, and performing a dedicated clean at a clean temperature. In some examples, the clean temperature is about equal to the deposition temperature.

主权项

1. A system for cleaning dopant contamination, comprising:
a susceptor disposed within a process chamber; at least one chamber kit component disposed within the process chamber; a first plurality of lamps configured to heat the susceptor; and a second plurality of lamps configured to heat the at least one chamber kit component; wherein the system is configured to deposit a doped semiconductor layer on a substrate loaded on the susceptor at a deposition temperature; and wherein the system is configured to perform an in-situ clean of the process chamber, and including the at least one chamber kit component, at the deposition temperature.