| 摘要 |
PROBLEM TO BE SOLVED: To satisfactorily prevent recombination of electrons in a transparent conductive layer and holes in a light absorption layer by a second buffer layer.SOLUTION: A photoelectric conversion device 1 of the present invention includes a light absorption layer 5 containing a chalcopyrite compound semiconductor, a first buffer layer 6 provided on the light absorption layer 5, a second buffer layer 7 provided on the first buffer layer 6, and a transparent conductive layer 9 provided on the second buffer layer 7. The first buffer layer 6 is made of a mixture of zinc sulfide and zinc oxide, and the second buffer layer 7 is made of zinc sulfide. Since the second buffer layer 7 is made of zinc sulfide, its electrical resistivity does not decrease. Thus, recombination of electrons in the transparent conductive layer 9 and holes in the light absorption layer 5 can be satisfactorily prevented. |
