发明名称 MEMORY TEST WITH IN-LINE ERROR CORRECTION CODE LOGIC
摘要 Systems and methods are provided for reusing existing test structures and techniques used to test memory data to also test error correction code logic surrounding the memories. A method includes testing a memory of a computing system with an error code correction (ECC) logic block bypassed and a first data pattern applied. The method further includes testing the memory with the ECC logic block enabled and a second data pattern applied. The method also includes testing the memory with the ECC logic block enabled and the first data pattern applied.
申请公布号 US2016019981(A1) 申请公布日期 2016.01.21
申请号 US201514867299 申请日期 2015.09.28
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 GORMAN Kevin W.;OUELLETTE Michael R.;PERRY Patrick E.
分类号 G11C29/42;G11B20/18;G11C29/36 主分类号 G11C29/42
代理机构 代理人
主权项 1. A method comprising: applying a first signal in a first state; applying a second signal in a first state that is configured to bypass an error code correction (ECC) logic block; generating a first data pattern using a basic data generator; writing the first data pattern to a memory of a computing system unmodified; generating read memory data from a reading of the first data pattern; testing the memory with the error code correction (ECC) logic block bypassed and the first data pattern applied, wherein the read memory data is passed through the ECC logic block without modification into a data comparator and repair system, and the read memory data is compared against expected data stored in the data comparator and repair system; applying the second signal in a second state that is configured to activate the ECC logic block, wherein the second signal in the second state is applied while the first signal in the first state is still applied; generating a second data pattern using a linear feedback shift register, wherein the second data pattern is generated based on a determination that the memory is operating correctly or is found to be in a repairable state; writing the second data pattern to the memory, wherein modifications are added to the second data pattern by the ECC logic block; generating second read memory data from a reading of the second data pattern; and testing the memory with the ECC logic block enabled and the second data pattern applied, wherein the second read memory data is passed into the ECC logic block with the added modifications.
地址 Armonk NY US