| 摘要 |
A vertical cavity surface emitting laser (VCSEL), comprising a bottom-up epitaxial layer structure; a group of p-type doped distributed Bragg reflectors in the bottom-up epitaxial layer structure form a double-oxide layer resonance leakage cavity such that light energy is concentrated in the double-oxide layer resonance leakage cavity in an LP11 lasing mode when the VCSEL lases, and the gain is reduced in the LP11 lasing mode, thus ensuring that the LP01 lasing mode is the main lasing mode of the VCSEL; an absorption layer in the bottom-up epitaxial layer structure is used to form an annular fence for absorbing the light energy in the LP11 lasing mode, thus ensuring output light power in the LP01 lasing mode. Therefore, the VCSEL in an embodiment has a simple manufacturing process and high reliability, and improves output light power. |
