| 摘要 |
A method includes forming on a first main surface of a semiconductor wafer of a first conduction type, a gate electrode of a semiconductor element, an edge termination region for forming a breakdown voltage of the semiconductor element, and a first semiconductor region of a second conduction type which surrounds the semiconductor element and the edge termination region. A groove may be formed to reach the first semiconductor region from a second main surface of the semiconductor wafer. The groove is formed so that a portion of the semiconductor wafer, that forms an outer circumferential end of the semiconductor wafer, remains and the groove is further towards a center of the semiconductor wafer than the outer circumferential end. A third semiconductor region of the second conduction type is on a side wall of the groove and electrically connects the first semiconductor region and a second semiconductor region. |
| 主权项 |
1. A method for manufacturing a semiconductor device comprising:
forming on a first main surface of a semiconductor wafer of a first conduction type, each of
a first electrode,a MOS gate structure which is a gate electrode of a semiconductor element,an edge termination region for forming a breakdown voltage of the semiconductor element, anda first semiconductor region, that is a second conduction type, surrounding the semiconductor element and the edge termination region; forming a groove that reaches the first semiconductor region from a second main surface of the semiconductor wafer, the groove being formed so that a portion of the semiconductor wafer, which has a predetermined width greater than zero and forms an entire outer periphery of the semiconductor wafer including an outer circumferential end of the semiconductor wafer, remains and the groove is formed inside the portion of the semiconductor wafer that forms the entire outer periphery of the semiconductor wafer so that the groove is formed further towards a center of the semiconductor wafer than the outer circumferential end; forming a second semiconductor region, that is the second conduction type, in direct contact with the second main surface of the semiconductor wafer; forming a third semiconductor region, that is the second conduction type, in direct contact with a side wall of the groove so as to be electrically connected to both of the first semiconductor region and the second semiconductor region; and forming a second electrode that is electrically connected to the second semiconductor region, wherein in the forming the groove, the groove is formed such that a corner of the groove, which is closest to the outer circumferential end of the semiconductor wafer than any other corner of the groove, has an arc shape in a plan view of the device. |
