Pseudo block operation mode in 3D NAND

摘要

A 3D NAND stacked non-volatile memory device, comprising: a string comprising a plurality of non-volatile storage elements, the string comprises a channel and extends vertically through layers of the 3D stacked non-volatile memory device, and the plurality of storage elements are subdivided into different groups based on group assignments, each group of the different groups comprises multiple adjacent storage elements of the plurality of storage elements; and a control circuit in communication with the string, the control circuit, to perform a Pseudo Block Operation Mode.

主权项

1. A three-dimensional (3D) non-volatile memory device, comprising:
a substrate; a plurality of alternating horizontal insulating layers and horizontal conductive layers above the substrate; a plurality of vertically oriented NAND strings above the substrate in a block, each NAND string comprising a plurality of non-volatile storage elements, each NAND string comprising a channel that extends vertically through the alternating insulating layers and conductive layers, the channel having a first end and a second end, wherein the block comprises pseudo blocks that each comprise at least one storage element of each of the NAND strings, wherein each of the NAND strings is a member of each of the pseudo blocks; and a control circuit in communication with the NAND strings, the control circuit is configured to erase the non-volatile storage elements in a selected pseudo block by applying an erase voltage to the first end of the channel of the NAND string, wherein a magnitude of the erase voltage depends on the location of the selected pseudo block with respect to the plurality of horizontal conductive layers.