| 摘要 |
PROBLEM TO BE SOLVED: To provide an image pick-up device capable of improving the spectroscopy performance.SOLUTION: The image pick-up device includes: a diffusion layer formed over a semiconductor substrate; and an electrode formed at the side different from the side on which light from the diffusion layer incidents, and to which a gate voltage is applied. By changing the gate voltage, the depth of the diffusion layer from the surface is changed, in which electric charges generated by the incident light in the diffusion layer are captured. The current, which represents the amount of the electric charges generated in an area from the surface side to the depth, is measured at each of changed gate voltages to analyze the strength of the incident light at each wavelength. The technique is applicable to a spectroscopic sensor as an element for spectroscopy and an image pick-up device which generates color information using dispersed result. |
