SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To proximally position a transistor and a protection diode of the transistor while inhibiting leakage current from the transistor to the protection diode.SOLUTION: A semiconductor device manufacturing method comprises the steps of: forming an element isolation insulation film 2 on a silicon substrate 1 to partition the silicon substrate 1 into a plurality of element formation regions 3 and forming a transistor T1 and a protection diode 20; and forming a gate insulation film 14 in the region 12 where the protection diode 20 is to be formed on the transistor T1 side beyond the protection diode 20 side and forming a protection electrode 16 on the gate insulation film 14. A width of each of the gate insulation film 14 and the protection electrode 16 is made larger than a gate length. The protection electrode 16 is connected to potential where a channel of a gate electrode 15 is turned off, or the same potential with the gate electrode 15.