| 发明名称 | Active device | ||
| 摘要 | An active device provided by the invention is disposed on a substrate and includes a gate, a gate insulating layer, an oxide semiconductor channel layer, a plurality of nano conductive wires, a source and a drain. The gate insulating layer is disposed between the gate and the oxide semiconductor channel layer. The nano conductive wires are distributed in the oxide semiconductor channel layer, in which the nano conductive wires do not contact the gate insulating layer and the nano conductive wires are arranged along a direction and not intersected with each other. The source and the drain are disposed on two sides opposite to each other of the oxide semiconductor channel layer, in which a portion of the oxide semiconductor channel layer is exposed between the source and the drain. | ||
| 申请公布号 | US9236492(B2) | 申请公布日期 | 2016.01.12 |
| 申请号 | US201414161705 | 申请日期 | 2014.01.23 |
| 申请人 | E Ink Holdings Inc. | 发明人 | Zan Hsiao-Wen;Tsai Chuang-Chuang;Yu Pei-Chen;Liu Hung-Chuan;Wu Bing-Shu;Lai Yi-Chun;Chen Wei-Tsung |
| 分类号 | H01L29/10;H01L27/12;H01L29/786 | 主分类号 | H01L29/10 |
| 代理机构 | Jianq Chyun IP Office | 代理人 | Jianq Chyun IP Office |
| 主权项 | 1. An active device, disposed on a substrate and comprising: a gate; an oxide semiconductor channel layer; a gate insulating layer, disposed between the gate and the oxide semiconductor channel layer; a plurality of nano conductive wires, distributed in the oxide semiconductor channel layer, wherein the nano conductive wires do not contact the gate insulating layer and the nano conductive wires are arranged along a direction and not intersected with each other; and a source and a drain, disposed on two sides opposite to each other of the oxide semiconductor channel layer, wherein a portion of the oxide semiconductor channel layer is exposed between the source and the drain, wherein the direction is parallel to the direction from the source to the drain. | ||
| 地址 | Hsinchu TW | ||