| 发明名称 |
Wafer, a method for processing a wafer, and a method for processing a carrier |
| 摘要 |
According to various embodiments, a method for processing a wafer may include: forming at least one hollow chamber and a support structure within the wafer, the at least one hollow chamber defining a cap region of the carrier located above the at least one hollow chamber and a bottom region of the carrier located below the at least one hollow chamber and an edge region surrounding the cap region of the carrier, wherein a surface area of the cap region is greater than a surface area of the edge region, and wherein the cap region is connected to the bottom region by the support structure; removing the cap region in one piece from the bottom region and the edge region. |
| 申请公布号 |
US9236241(B2) |
申请公布日期 |
2016.01.12 |
| 申请号 |
US201414269260 |
申请日期 |
2014.05.05 |
| 申请人 |
Infineon Technologies Dresden GmbH |
发明人 |
Kautzsch Thoralf;Scire Alessia;Bieselt Steffen;Rudolph Uwe;Mueller Marco;Binder Boris |
| 分类号 |
H01L21/302;H01L21/02 |
主分类号 |
H01L21/302 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for processing a wafer, the method comprising:
forming at least one hollow chamber and a support structure within the wafer, the at least one hollow chamber defining a cap region of the wafer located above the at least one hollow chamber and a bottom region of the wafer located below the at least one hollow chamber and an edge region surrounding the cap region of the wafer, wherein a surface area of the cap region is greater than a surface area of the edge region, and wherein the cap region is connected to the bottom region by the support structure; removing the cap region in one piece from the bottom region and the edge region. |
| 地址 |
Dresden DE |
