ALKYL-ALKOXYSILACYCLIC COMPOUND AND METHOD FOR DEPOSITING FILMS USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method and composition for producing a porous low k dielectric film via chemical vapor deposition.SOLUTION: In one aspect, the method comprises the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber gaseous reagents including at least one structure-forming precursor comprising an alkyl-alkoxysilacyclic compound, and a porogen; applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, where the preliminary film contains the porogen and the preliminary film is deposited; and removing from the preliminary film at least a portion of the porogen contained therein to provide the film with pores and a dielectric constant of about 2.7 or less. In certain embodiments, the structure-forming precursor further comprises a hardening agent.