Integrated circuit package with thermal neutron shielding

摘要

A semiconductor package with thermal neutron shielding is disclosed. The semiconductor package includes a substrate and an integrated circuit die disposed on the substrate. The semiconductor package also has a thermal neutron shield including a shielding material. The shielding material includes boron-10 and is configured to inhibit a portion of thermal neutrons that encounter the thermal neutron shield from passing through the thermal neutron shield.

主权项

1. A semiconductor package, comprising:
a substrate; a first integrated circuit die disposed on the substrate; a thermal neutron shield including a shielding material having a thickness and a concentration of boron-10 sufficient to prevent at least 50 percent of thermal neutrons that encounter the thermal neutron shield from passing through the thermal neutron shield; and wherein the thermal neutron shield includes a layer of underfill material including the shielding material, and the underfill material affixes the first integrated circuit die to the substrate.