| 发明名称 | Power module | ||
| 摘要 | A power module according to the present invention includes a semiconductor device; a base part formed from an electrically conductive material on which the semiconductor device is mounted; a signal lead part formed from the same material as the base part, the signal lead part being electrically connected to the semiconductor device; and a thin plate lead part formed from the same material as the base part such that it is formed seamlessly from the base part and it is thinner than the base part, the thin plate lead part extending on the same side as the signal lead part with respect to the base part, wherein the thin plate lead part is electrically connected to a predetermined terminal of the semiconductor device via the base part such that it forms a potential detecting terminal for detecting a potential of the predetermined terminal of the semiconductor device. | ||
| 申请公布号 | US9236330(B2) | 申请公布日期 | 2016.01.12 |
| 申请号 | US201013988602 | 申请日期 | 2010.11.29 |
| 申请人 | TOYOTA JIDOSHA KABUSHIKI KAISHA | 发明人 | Kadoguchi Takuya;Kawashima Takanori;Okumura Tomomi |
| 分类号 | H01L23/48;H01L21/00;H01L23/495;H01L23/00;H02M7/537;H01L23/433;H01L25/07;H02M7/00 | 主分类号 | H01L23/48 |
| 代理机构 | Kenyon & Kenyon LLP | 代理人 | Kenyon & Kenyon LLP |
| 主权项 | 1. A power module comprising: a semiconductor device; a base part formed from an electrically conductive material on which the semiconductor device is mounted; a signal lead part formed from the same material as the base part, the signal lead part being electrically connected to the semiconductor device; a thin plate lead part formed from the same material as the base part such that it is formed seamlessly from the base part and it is thinner than the base part, the thin plate lead part extending on the same side as the signal lead part with respect to the base part; and a power lead part formed from the same material as the base part such that it is formed seamlessly from the base part and it is thinner than the base part, the power lead part connecting a predetermined terminal of the semiconductor device to a positive electrode side of a power supply, wherein the thin plate lead part is electrically connected to a predetermined terminal of the semiconductor device via the base part such that it forms a potential detecting terminal for detecting a potential of the predetermined terminal of the semiconductor device. | ||
| 地址 | Toyota-Shi JP | ||