BONDED WAFER FORMATION METHOD

摘要

PROBLEM TO BE SOLVED: To enable prevention of deterioration in function or reliability of a device, which is caused by an ambient atmosphere.SOLUTION: A bonded wafer formation method comprises the steps of: bonding a firs oxide film (16) of a wafer (10) and a support member (35) composed of a silicon substrate by ambient temperature bonding by bringing the first oxide film into contact with the support member; subsequently grinding the wafer on a rear face (11b) side to thin the wafer; bonding the rear face of the thinned wafer with a second oxide film (26) of a base wafer (20) by ambient temperature bonding by bringing the rear face into contact with the second oxide film; grinding a support member (35) to thin the support member; and subsequently connecting a first electrode (14) in a first device (13) of the wafer and a second electrode (24) in a second device (23) of the base wafer.