| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which inhibits deterioration in adhesion between an anode electrode and a diode and inhibits a decrease in surge current capacity of a diode.SOLUTION: A semiconductor of an embodiment comprises: a first electrode; a second electrode; a first conductivity type first semiconductor region which is provided between the first electrode and the second electrode and contacts the first electrode; a second conductivity type second semiconductor region selectively provided between the first semiconductor region and the second electrode; a contact region which is provided between the second semiconductor region and the second electrode and contacts the second semiconductor region and the second electrode; a plurality of second conductivity type third semiconductor regions which are provided between the second electrode and the first semiconductor region and contact the second electrode; and interconnections which contact the second electrode and each joint part with the second electrode is located on the third semiconductor region but not located on the contact region. |
