METHOD AND APPARATUS FOR FORMING SILICON NITRIDE FILM

摘要

The present invention provides a method for forming a silicon nitride film, capable of forming a silicon nitride film with superior physical and electrical features despite an ultra thin film state. The method for forming a silicon nitride film is to form a silicon nitride film on a surface of an object to be processed. The method comprises forming a seed layer functioning as a seed of the silicon nitride film on the surface of the object to be processed by using at least an aminosilane-based gas before forming the silicon nitride film on the surface of the object to be processed (step 2 to step 4).