MEMORY ELEMENT WITH A REACTIVE METAL LAYER

摘要

A memory cell including conductive oxide electrodes is disclosed. The memory cell includes a memory element operative to store data as a plurality of resistive states. The memory element includes a layer of a conductive metal oxide (CMO) (e.g., a perovskite) in contact with an electrode that may comprise one or more layers of material. At least one of those layers of material can be a conductive oxide (e.g., a perovskite such as LaSrCoO3-LSCoO or LaNiO3-LNO) that is in contact with the CMO. The conductive oxide layer can be selected as a seed layer operative to provide a good lattice match with and/or a lower crystallization temperature for the CMO. The conductive oxide layer may also be in contact with a metal layer (e.g., Pt). The memory cell additionally exhibits non-linear IV characteristics, which can be favorable in certain arrays, such as non-volatile two-terminal cross-point memory arrays.

主权项

1. A re-writeable non-volatile memory device, comprising:
a re-writeable non-volatile two-terminal memory element (ME) comprising tantalum, the ME including
a first terminal,a second terminal,a first layer of a conductive metal oxide (CMO), anda second layer in direct contact with the first layer, the second layer and the first layer operative to store at least one-bit of data as a plurality of resistive states, the first and second layer are electrically in series with each other and with the first and second terminals.