APPARATUS, SYSTEM AND METHOD OF BACK SIDE ILLUMINATION (BSI) COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) PIXEL ARRAY

摘要

Some demonstrative embodiments include devices and/or methods of Back Side Illumination (BSI) Complementary Metal-Oxide-Semiconductor (CMOS) pixel array. For example, a BSI CMOS pixel array may include a plurality of pixels, a pixel of the plurality of pixels may include one or more Metal-Oxide-Semiconductor (MOS) transistors comprising one or more well regions, a well region of the one or more well regions comprising an N-Well (NW) region or a P-well (PW) region; a photodiode; an epitaxial (epi) layer comprising an absorption area and a collection area, the absorption area to absorb incoming photons and to generate electrons responsive to absorbed photons, and the collection area connecting the absorption area to the photodiode to provide the electrons from the absorption area to the photodiode; and a barrier layer separating the absorption area from the one or more well regions.

主权项

1. A back-side illumination (BSI) complementary metal-oxide-semiconductor (CMOS) pixel array comprising:
a plurality of pixels, a pixel of said plurality of pixels comprising:
one or more Metal-Oxide-Semiconductor (MOS) transistors comprising one or more well regions, a well region of said one or more well regions comprising an N-Well (NW) region or a P-well (PW) region;a photodiode;an epitaxial (epi) layer comprising an absorption area and a collection area, said absorption area to absorb incoming photons and to generate electrons responsive to absorbed photons, and said collection area connecting said absorption area to said photodiode to provide said electrons from said absorption area to said photodiode; anda barrier layer separating said absorption area from said one or more well regions.