| 摘要 |
Disclosed is a light emitting device (200) including a substrate (210), a first conductive semiconductor layer (220) disposed on the substrate, an active layer (230) disposed on the first conductive semiconductor layer, and a second conductive semiconductor layer (240) disposed on the active layer, wherein the first conductive semiconductor layer (220) comprises a first layer (221) provided at the upper surface thereof with a notch (222), a second layer (223) disposed on the first layer and a third layer (225) disposed on the second layer, wherein the first conductive semiconductor layer further comprises a blocking layer (227) between the first layer and the second layer and the blocking layer is disposed along the notch (222). The light emitting device can reduce leakage current by dislocation (290) and improve resistance to static electricity. |
