| 摘要 |
<p>A method of making a diode begins by depositing an Al x Ga 1-x N nucleation layer on a SiC substrate, then depositing an n+ GaN buffer layer (112), an n- GaN layer (110), an Al x Ga 1-x N barrier layer (108), and an SiO 2 dielectric layer. A portion of the dielectric layer is removed and a Schottky metal (106) deposited in the void. The dielectric layer is affixed to the support layer with a metal bonding layer using an Au-Sn utectic wafer bonding process, the substrate is removed using reactive ion etching to expose the n+ layer, selected portions of the n+, n-, and barrier layers are removed to form a mesa diode structure on the dielectric layer over the Schottky metal (106); and an ohmic (114) contact is deposited on the n+ layer (112).</p> |
