Semiconductor memory device using a current mirror

摘要

A semiconductor memory device is disclosed. The semiconductor memory device includes a current mirror configured to include a current mirror section for current of a first line to a second line and transistors coupled in parallel, a detector configured to control a voltage of the first line based on voltages of sensing nodes, a fail bit set section configured to control a voltage of the second line, and a comparator configured to compare the voltage of the first line with the voltage of the second line and generate a pass and fail check signal based on the comparing result.

主权项

1. A semiconductor memory device comprising:
a memory cell array; a page buffer coupled to the memory cell array through sensing nodes; and a pass and fail check circuit, a first distance between the memory cell array and the pass and fail check circuit being higher than a second distance between the memory cell array and the page buffer; wherein the page buffer is configured to control a voltage of a first line based on voltages of the sensing nodes; wherein the pass and fail check circuit includes:
a current mirror section configured to mirror current of the first line to a second line;transistors coupled in parallel between the current mirror section and a supply node; anda comparator configured to compare the voltage of the first line with a voltage of the second line to generate a pass and fail check signal.