Precursor composition for deposition of silicon dioxide film and method for fabricating semiconductor device using the same

摘要

A precursor composition for forming a silicon dioxide film on a substrate, the precursor composition including at least one precursor compound represented by the following chemical formulas (1), (2), and (3):
HxSiAy(NR1R2)4-x-y  (1)HxSi(NAR3)4-x  (2)HxSi(R4)z(R5)4-x-z  (3)
wherein, independently in the chemical formulas (1), (2), and (3), H is hydrogen, x is 0 to 3, Si is silicon, A is a halogen, y is 1 to 4, N is nitrogen, and R1, R2, R3, and R5 are each independently selected from the group of H, aryl, perhaloaryl, C1-8 alkyl, and C1-8 perhaloalkyl, and R4 is aryl in which at least one hydrogen is replaced with a halogen or C1-8 alkyl in which at least one hydrogen is replaced with a halogen.

主权项

1. A precursor composition for forming a silicon dioxide film on a substrate, the precursor composition including at least one precursor compound represented by the following chemical formulas (1), (2), and (3):
HxSiAy(NR1R2)4-x-y  (1) HxSi(NAR3)4-x  (2) HxSi(R4)z(R5)4-x-z  (3) wherein, independently in the chemical formulas (1), (2), and (3), H is hydrogen, x is 0 in the chemical formula (1) and 0 to 3 in the chemical formulas (2) and (3), Si is silicon, A is a halogen, y is 1 to 4, z is 1 to 4, N is nitrogen, and R1, R2, R3, and R5 are each independently selected from the group of H, aryl, perhaloaryl, C1-8 alkyl, and C1-8 perhaloalkyl, and R4 is aryl in which at least one hydrogen is replaced with a halogen or C1-8 alkyl in which at least one hydrogen is replaced with a halogen, and wherein the precursor composition includes the precursor compound of formulas (2) and (3), and R3 and R5 are each independently methyl or ethyl.