Memory programming methods and memory systems

摘要

Memory programming methods and memory systems are described. One example memory programming method includes first applying a first signal to a memory cell to attempt to program the memory cell to a desired state, wherein the first signal corresponds to the desired state, after the first applying, determining that the memory cell failed to place in the desired state, after the determining, second applying a second signal to the memory cell, wherein the second signal corresponds to another state which is different than the desired state, and after the second applying, third applying a third signal to the memory cell to program the memory cell to the desired state, wherein the third signal corresponds to the desired state. Additional method and apparatus are described.

主权项

1. A memory programming method comprising:
first applying a first signal to a memory cell to attempt to program the memory cell to a desired state, wherein the first signal corresponds to the desired state; after the first applying, determining that the memory cell failed to place in the desired state; after the determining, second applying a second signal to the memory cell, wherein the second signal corresponds to another state which is different than the desired state; after the second applying, third applying a third signal to the memory cell to program the memory cell to the desired state, wherein the third signal corresponds to the desired state; and after the third applying, ceasing applying signals to the memory cell to attempt to program the memory cell to the desired state even though the memory cell failed to be programmed to the desired state as a result of the third signal having a maximum characteristic.