| 发明名称 |
METHODS OF REMOVING A HARD MASK |
| 摘要 |
In a method of removing a hard mask, a hard mask is formed on a substrate. A first plasma treatment is performed on the hard mask at a first temperature. A second plasma treatment is performed on the hard mask at a second temperature higher than the first temperature. |
| 申请公布号 |
US2015380267(A1) |
申请公布日期 |
2015.12.31 |
| 申请号 |
US201514706975 |
申请日期 |
2015.05.08 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
HAN Je-Woo;MIN Gyung-Jin |
| 分类号 |
H01L21/311;H01L21/3065;H01L21/308 |
主分类号 |
H01L21/311 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing, the method comprising:
forming a hard mask on a substrate; performing a first plasma treatment on the hard mask while controlling the hard mask to be at a first temperature; and performing a second plasma treatment on the hard mask while controlling the hard mask to be at a second temperature higher than the first temperature. |
| 地址 |
Suwon-si KR |
