发明名称 Method for Testing Semiconductor Dies and a Test Apparatus
摘要 A method includes: providing a test apparatus; providing an electrically conductive carrier; providing a semiconductor substrate having a first main face, a second main face opposite to the first main face, and a plurality of semiconductor dies, the semiconductor dies including a first contact element on the first main face and a second contact element on the second main face; placing the semiconductor substrate on the carrier with the second main face facing the carrier; electrically connecting the carrier to a contact location disposed on the first main face; and testing a semiconductor die by electrically connecting the test apparatus with the first contact element of the semiconductor die and the contact location.
申请公布号 US2015377954(A1) 申请公布日期 2015.12.31
申请号 US201414319268 申请日期 2014.06.30
申请人 Infineon Technologies AG 发明人 Thalmann Erwin;Leutschacher Michael;Musshoff Christian;Kramp Stefan
分类号 G01R31/26;G01R1/073 主分类号 G01R31/26
代理机构 代理人
主权项 1. A method for testing semiconductor dies, the method comprising: providing a test apparatus; providing an electrically conductive carrier; providing a semiconductor substrate comprising a first main face, a second main face opposite to the first main face, and a plurality of semiconductor dies, the semiconductor dies comprising a first contact element on the first main face and a second contact element on the second main face; placing the semiconductor substrate on the carrier with the second main face facing the carrier; electrically connecting the carrier to a contact location disposed on the first main face; and testing a semiconductor die by electrically connecting the test apparatus with the first contact element of the semiconductor die and the contact location.
地址 Neubiberg DE