发明名称 |
Method for Testing Semiconductor Dies and a Test Apparatus |
摘要 |
A method includes: providing a test apparatus; providing an electrically conductive carrier; providing a semiconductor substrate having a first main face, a second main face opposite to the first main face, and a plurality of semiconductor dies, the semiconductor dies including a first contact element on the first main face and a second contact element on the second main face; placing the semiconductor substrate on the carrier with the second main face facing the carrier; electrically connecting the carrier to a contact location disposed on the first main face; and testing a semiconductor die by electrically connecting the test apparatus with the first contact element of the semiconductor die and the contact location. |
申请公布号 |
US2015377954(A1) |
申请公布日期 |
2015.12.31 |
申请号 |
US201414319268 |
申请日期 |
2014.06.30 |
申请人 |
Infineon Technologies AG |
发明人 |
Thalmann Erwin;Leutschacher Michael;Musshoff Christian;Kramp Stefan |
分类号 |
G01R31/26;G01R1/073 |
主分类号 |
G01R31/26 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method for testing semiconductor dies, the method comprising:
providing a test apparatus; providing an electrically conductive carrier; providing a semiconductor substrate comprising a first main face, a second main face opposite to the first main face, and a plurality of semiconductor dies, the semiconductor dies comprising a first contact element on the first main face and a second contact element on the second main face; placing the semiconductor substrate on the carrier with the second main face facing the carrier; electrically connecting the carrier to a contact location disposed on the first main face; and testing a semiconductor die by electrically connecting the test apparatus with the first contact element of the semiconductor die and the contact location. |
地址 |
Neubiberg DE |