发明名称 |
VERTICAL DEVICE ARCHITECTURE |
摘要 |
The present disclosure relates to a vertical transistor device having rectangular vertical channel bars extending between a source region and a drain region, and an associated method of formation. In some embodiments, the vertical transistor device has a source region disposed over a semiconductor substrate. A channel region with one or more vertical channel bars is disposed over the source region. The one or more vertical channel bars have a bottom surface abutting the source region that has a rectangular shape (i.e., a shape with four sides, with adjacent sides of different length, and four right angles). A gate region is located over the source region at a position abutting the vertical channel bars, and a drain region is disposed over the gate region and the vertical channel bars. The rectangular shape of the vertical channel bars provides for a vertical device having good performance and cell area density. |
申请公布号 |
US2015380548(A1) |
申请公布日期 |
2015.12.31 |
申请号 |
US201414318835 |
申请日期 |
2014.06.30 |
申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
发明人 |
Wang Chih-Hao;Liaw Jhon Jhy;Lien Wai-Yi;You Jia-Chuan;Chiu Yi-Hsun;Tsai Ching-Wei;Wu Wei-Hao |
分类号 |
H01L29/78;H01L29/10;H01L29/423;H01L29/66 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
1. A vertical transistor device, comprising:
a source region disposed over a semiconductor substrate; a channel region comprising one or more vertical channel bars disposed over the source region, wherein the one or more vertical channel bars have a bottom surface with a rectangular shape that abuts the source region; a gate region overlying the source region at a position separated from sidewalls of the one or more vertical channel bars by a gate dielectric layer; and a drain region disposed over the gate region and the one or more vertical channel bars. |
地址 |
Hsin-Chu TW |